any changing of specification will not be informed individual http://www.secosgmbh.com l a b s g v 3 1 2 k j c h d t o p v i e w d i m m i n m a x a 2 . 8 0 0 3 . 0 4 0 b 1 . 2 0 0 1 . 4 0 0 c 0 . 8 9 0 1 . 1 1 0 d 0 . 3 7 0 0 . 5 0 0 g 1 . 7 8 0 2 . 0 4 0 h 0 . 0 1 3 0 . 1 0 0 j 0 . 0 8 5 0 . 1 7 7 k 0 . 4 5 0 0 . 6 0 0 l 0 . 8 9 0 1 . 0 2 0 s 2 . 1 0 0 2 . 5 0 0 v 0 . 4 5 0 0 . 6 0 0 a l l d i m e n s i o n i n m m s o t - 2 3 surface mount switching diode BAS19 maximum r a tings rating symbol value unit continuous reverse voltage v r vdc peak forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr 5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c device marking BAS19 = jp electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics reverse voltage leakage current (v r = 100 vdc,tj = 25 o c) (v r = 100 vdc, t j = 150c) (v r = 25 vdc, t j = 150 c) i r e e e 0.1 100 40 m adc reverse breakdown voltage (i br = 100 m adc) v (br) 120 e vdc forward voltage (i f = 1.0 madc) (i f = 10 madc) (i f = 100 madc) (i f = 200 madc) v f e e e e 715 855 1000 1250 mv diode capacitance (v r = 0, f = 1.0 mhz) c d e 5.0 pf reverse recovery time (i f = i r = 30 madc, r l = 100 w) t rr 50 ns 1.fr?5 = 1.0 x 0.75 x 0.062 in. 2.alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. features fast switching speed surface mount package ideally suited for automatic insertion for general purpose switching applications high conductance 1 anode 3 c a thode 1 2 3 e l e k t r o n i s c h e b a u e l e m e n t e 120 01 -jun-2002 rev. a page 1 of 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l h t t p : / /www.secosgmbh.com surface mount switching diode BAS19 notes: 1. a 2.0 k w variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 w 0.1 m f dut v r 100 m h 0.1 m f 50 w output pulse generator 50 w i nput sampling oscilloscopes t r t p t 10% 90% i f i r t rr t i r(rec ) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec ) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit e l e k t r o n i s c h e b a u e l e m e n t e figure 2. forward voltage figure 3. reverse leakage 3500 f orward v oltage (mv) forward current (ma) 2500 1500 500 0 0.2 0.5 21 3000 2000 1000 5 10 20 50 100 200 0.1 7000 reverse c urrent (na) reverse voltage (v) 5000 3000 5 0 21 6000 4000 6 5 10 20 50 100 200 1 2 3 4 t a = 155 c t a = 55 c t a = 25 c 300 t a = 155 c t a = 25 c t a = 55 c 01-jun-2002 rev. a page 2 of 2
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